Why an iSE?
PowerfulWith the power of spectroscopic ellipsometry (SE), the iSE is capable of measuring thickness and optical properties with much higher certainty than other techniques.
CompactNew compact design enables easy integration onto any chamber.
VersatileAccurately determines thickness and optical properties for wide variety of thin films including metals, semiconductors, oxides, nitrides, and more.
AffordableThe power of spectroscopic ellipsometry at a reasonable price.
Easy-to-UseUser-friendly interface for real-time analysis of thin film growth and etch.
Product Category: Ellipsometry
Industry: Particle and surface science
Supplier: J A Woollam
Fast, Wide-Spectrum Measurements
The iSE utilizes a new optical design with Dual-Rotation™ in combination with modern CCD detection to provide hundreds of wavelengths in a fraction of a second. Dual-Rotation enables continuous, multi-zone measurements with unparalleled accuracy and capability.
Ellipsometry measurements over a wide spectral range provide sensitivity to a variety of material properties such as composition, conductivity, surface conditions, etc. In addition, ellipsometry is sensitive to thickness changes at the sub-angstrom level.
Monitors changes in film thickness and optical properties during deposition. Use these measurements for feedback control.
In-situ SE uses light to probe the thin film in a noninvasive manner. The ellipsometer is outside the process chamber and light is allowed to enter through windows and interact with the sample. The light beam directly measures surface of interest without any damage or need for special sample preparation.
SE measurements calculate the change in polarization of light. For real-time measurements, this has significant advantages over intensity-based measurements:
• Data accuracy is not affected by coated windows
• Collects accurate data even without collecting the entire beam
• Polarization contains phase measurements which are highly sensitive to very thin films
Common Real-Time Ellipsometry Measurements
• Thin film thickness from single or multiple layers
• Growth or etch rates
• Process kinetics
• Optical constants
• Surface quality before and after processing
• Film nucleation behavior
• Process conditions that affect optical constants (deposition rate, temperature, pressure, etc.)
• Real-time end-point detection
Efficient Process Characterization
A common application of real-time SE involves monitoring an entire series of thin films during a single process. Each film is produced with varying conditions, which enables a quick understanding of the deposition process. Optical constants and growth rate are determined from each layer to characterize the process.
Is chamber pictured included?
The vacuum chamber shown in the photos is for demonstration purposes only. The iSE designed to work with many different types of vacuum chambers.
What is included?
Source and Receiver
Tilt Stage Mounts
2.75” Optical Viewports
What data types can the iSE measure?
Spectroscopic ellipsometry, advanced generalized-SE or Mueller Matrix-SE
Which software package is included?
|Ellipsometer Type||Dual-Rotation™ Optical Design|
|Wavelength Range||400-1000 nm|
|Number of Wavelengths||190|
|Data Acquisition Rate||0.3 sec. [Fastest]
1-2 sec. [Typical]
|Chamber Requirements||Port Size: 1.33” or 2.75”
Typical Port Angle: 60°-75°*
*measured from sample normal